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Scalable programmable photonic integrated circuits (PICs) can potentially transform the current state of classical and quantum optical information processing. However, traditional means of programming, including thermo-optic, free carrier dispersion, and Pockels effect result in either large device footprints or high static energy consumptions, significantly limiting their scalability. While chalcogenide-based non-volatile phase-change materials (PCMs) could mitigate these problems thanks to their strong index modulation and zero static power consumption, they often suffer from large absorptive loss, low cyclability, and lack of multilevel operation. Here, we report a wide-bandgap PCM antimony sulfide (Sb₂S₃)-clad silicon photonic platform simultaneously achieving low loss (<1.0 dB), high extinction ratio (>10 dB), high cyclability (>1600 switching events), and 5-bit operation. These Sb₂S₃-based devices are programmed via on-chip silicon PIN diode heaters within sub-ms timescale, with a programming energy density of$$\sim 10\,{fJ}/n{m}^{3}$$$~10fJ/n{m}^3$. Remarkably, Sb₂S₃is programmed into fine intermediate states by applying multiple identical pulses, providing controllable multilevel operations. Through dynamic pulse control, we achieve 5-bit (32 levels) operations, rendering 0.50 ± 0.16 dB per step. Using this multilevel behavior, we further trim random phase error in a balanced Mach-Zehnder interferometer.

 

We report a hybrid phase-change mateial Sb₂S₃-silicon photonic tunable directional coupler, which exhibits low insertion loss (< 1.0 dB), large extinction ratio (> 10 dB), high endurance (> 1,600 switching events), and 32 operation levels.

 

The Zintl phases, Yb 14 M Sb 11 ( M = Mn, Mg, Al, Zn), are now some of the highest thermoelectric efficiency p-type materials with stability above 873 K. Yb 14 MnSb 11 gained prominence as the first p-type thermoelectric material to double the efficiency of SiGe alloy, the heritage material in radioisotope thermoelectric generators used to power NASA’s deep space exploration. This study investigates the solid solution of Yb 14 Mg 1− x Al x Sb 11 (0 ≤ x ≤ 1), which enables a full mapping of the metal-to-semiconductor transition. Using a combined theoretical and experimental approach, we show that a second, high valley degeneracy ( N v = 8) band is responsible for the groundbreaking performance of Yb 14 M Sb 11 . This multiband understanding of the properties provides insight into other thermoelectric systems (La 3− x Te 4 , SnTe, Ag 9 AlSe 6 , and Eu 9 CdSb 9 ), and the model predicts that an increase in carrier concentration can lead to zT > 1.5 in Yb 14 M Sb 11 systems. 

Correction for ‘Measured and simulated thermoelectric properties of FeAs 2−x Se x ( x = 0.30–1.0): from marcasite to arsenopyrite structure’ by Christopher J. Perez et al. , Mater. Adv. , 2020, 1 , 1390–1398, DOI: 10.1039/D0MA00371A.